dm p45h21dhe document number ds 386 32 rev . 3 - 2 1 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information 450v p - channel enhancement mode mosfet product summary b v dss r ds (o n ) i d t c = + 25 ? c - 45 0v 21 ? @ v gs = - 10v - 0.6 a description this 450v enhancement mode p - channel mosfet provides users with a competitive specification offering efficie nt power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. applications benefiting from this device include a variety of telecom and general high - voltage switching circuits. applications ? load s witching ? uninterrupted power supply features and benefits ? low g ate d rive ? low i nput c apacitance ? fast s witching s peed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: so t223 ? cas e material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sens itivity: level 1 per j - std - 020 ? terminals connections: see d iagram b elow ? terminals: finish - matte tin a nnealed over copper l ead f rame . solde rable per mil - std - 202, method 208 ? weight: 0. 112 grams ( a pproximate) ordering information (note 4 ) part number qualification case packaging dm p 45 h 21dh e - 13 standard sot223 2,5 00 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and an timony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information top view sot223 equivalent circuit p4 50h e yww d s g pin out - top view = manufacturers marking p450he = marking code y ww = date code marking y or y = year (ex: 7 = 201 7 ) ww = week ( 01 to 53) e3
dm p45h21dhe document number ds 386 32 rev . 3 - 2 2 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 4 50 v gate - source voltage v gss 3 0 v continuous drain current (note 6 ) v gs = 10 v t c = +25c i d - 0.6 a t c = +70c i d - 0.4 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) (note5) i dm - 1.2 a maximum body diode continuous current (note5) i s - 0.9 a avalan che energy (note 8) l=60mh e as 30 mj avalanche current (note 8) l=60 mh i as - 1 a peak d iode r ecovery dv/dt ( i sd 00a/s 26 v/ns thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) t c = +25c p d 12.5 w t c = + 70 c 8 thermal resistance, junction to ambient ( note 5 ) r ja 108 c/w thermal resistance, junction to case (note 6 ) r j c 10 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max u nit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 45 0 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ds = - 45 0 v, v gs = 0v gate - source leakage i gss ? ? gs = 3 0 v, v ds = 0v on ch aracteristics (note 6 ) gate threshold voltage v gs( th ) - 3 .0 - 4 - 5 .0 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds(on) ? ? gs = - 10 v, i d = - 0.3 a diode forward voltage v sd ? gs = 0v, i s = - 1 a dynamic characteristics (note 7 ) input capacitance c iss ? ? ds = - 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g ? ? ? ? ds = - 225 v, i d = - 1 a , v gs = - 10 v gate - source charge q gs ? ? gd ? ? d( on ) ? ? dd = - 225 v, r g = 3.0 ? ? d = - 1 a turn - on rise time t r ? ? d( off ) ? ? f ? ? ? ? rr ? 113 ? gs = 0 v, v dd = - 200 v , i s = - 1 a , d i /d t = 100a/ rr ? ? 540 ? ? gs = 0 v, v dd = - 200 v , i s = - 1 a , d i /d t = 100a/ notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not su bject to production testing.
dm p45h21dhe document number ds 386 32 rev . 3 - 2 3 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 12 14 16 18 20 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 5.0v v gs = 5.5v v gs = 10.0v v gs = 8.0v v gs = 6.0v v gs = 7.0v 6 8 10 12 14 16 18 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = - 10v 15 20 25 30 35 40 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 1a 0 5 10 15 20 25 30 35 0 0.2 0.4 0.6 0.8 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature - 55 25 85 150 125 v gs = - 10v 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 10v, i d = - 1a 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 7 8 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 20v - 55 25 85 125 150
dm p45h21dhe document number ds 386 32 rev . 3 - 2 4 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information 0 5 10 15 20 25 30 35 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( gs = - 10v, i d = - 1a 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 is, source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 150 o c 0.01 0.1 1 10 100 1000 10000 0 50 100 150 200 250 300 350 400 450 i dss , leakage current (na) v ds , drain - source voltage (v) fig ure 10. typical drain - source leakge current vs. voltage 25 125 85 150 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 vgs (v) qg - (nc) figure 12. gate charge v ds = - 225v, i d = - 1a 1 2 3 4 5 6 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure11. typical junction capacitance f=1mhz c rss c oss c iss
dm p45h21dhe document number ds 386 32 rev . 3 - 2 5 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information 0.001 0.01 0.1 1 10 1 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 13. soa, safe operation area t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = - 10v p w =10s p w =10ms p w =100 s dc r ds(on) limited p w =1ms p w =100ms p w =1s 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 108 /w duty cycle, d = t1 / t2
dm p45h21dhe document number ds 386 32 rev . 3 - 2 6 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot223 sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot223 d imensions value (in mm) c 2.30 c1 6.40 x 1.20 x1 3.30 y 1.60 y1 1.60 y2 8.00 a1 a 7 7 d b e e1 b1 c e1 l 0-10 q e 0.25 seating plane gauge plane x1 y1 y x c c1 y2
dm p45h21dhe document number ds 386 32 rev . 3 - 2 7 of 7 www.diodes.com september 2017 ? diodes incorporated dm p45h21dh e advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, incl uding, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhan cements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purc hased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all clai ms, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, inte rnational or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for refe rence. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or sy stems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any comp onent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in th e safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporate d products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its re presentatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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